Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects
نویسنده
چکیده
Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STTMRAM in semiconductor industry have been witnessed in recent years. This paper will present a review on the progress in the intrinsic switching current density reduction and STT-MRAM prototype chip demonstration. Challenges to overcome in order for STT-MRAM to be a mainstream memory technology in future technology nodes will be discussed. Finally, potential applications of STT-MRAM in embedded and standalone memory markets will be outlined.
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